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MRF8S21140HR5

厂商:
Freescale
类别:
RF功率晶体管
包装:
-
封装:
NI-780
无铅情况/ROHS:
无铅
描述:
HV8 2GHZ 140W NI780

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  • 参数
  • 描述
  • 文档
参数 数值
Device Weight (g) 6.42500
Life Cycle Description (code) PRODUCT RAPID GROWTH
Description HV8 2GHZ 140W NI780
2nd Level Interconnect e4
Material Type Tested Packaged Device
Number of Reflow Cycles 3
Peak Package Body Temperature (PPT)(°C) 260
Test Signal W-CDMA
Application/Qualification Tier COMMERCIAL, INDUSTRIAL
Class AB
Harmonized Tariff (US) Disclaimer 8541.29.0075
RoHS Certificate of Analysis (CoA) Contact Us
Wideband Efficiency (Typ) (%) 31.7
Application LTE / W-CDMA
Leadtime (weeks) 8
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 34 @ AVG
Package Length (nominal) (mm) 34.040
POQ Container REEL
Sample Exception Availability N
Power Gain (Typ) (dB) @ f (MHz) 17.9 @ 2140
MPQ Container REEL
Package Width (nominal) (mm) 9.780
Part Number MRF8S21140HR5
Die Technology LDMOS
Micron Size (μm) 6
Preferred Order Quantity (POQ) 50
Wideband Frequency (Min-Max) (MHz) (f) 1850 to 2300
Budgetary Price($US) -
REACH SVHC Freescale REACH Statement
Status Active
Matching I/O
Maximum Time at Peak Temperature (s) 40
Tape & Reel Yes
Export Control Classification Number (US) 5A991
Frequency (Max) (MHz) 2170
Halogen Free Yes
Package Description and Mechanical Drawing NI-780
Package Thickness (nominal) (mm) 3.760
Pin/Lead/Ball Count 3
Supply Voltage (Typ) (V) 28
Material Composition Declaration (MCD) Download MCD Report Download MCD Report
Minimum Package Quantity (MPQ) 50
Efficiency (Typ) (%) 31.7
Frequency Band (Min-Max) (MHz) 2110 to 2170
P1dB (Typ) (W) 126
Thermal Resistance (Spec) (°CW) 0.47

The MRF8S21140HR3 and MRF8S21140HSR3 are designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. View Product Image

Features

  • Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 970 mA, Pout = 34 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
  • Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 188 Watts CW Output Power (3 dB Input Overdrive from Rated Pout)
  • Typical Pout @ 1 dB Compression Point 126 Watts CW
  • 100% PAR Tested for Guaranteed Output Power Capability
  • Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters
  • Internally Matched for Ease of Use
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Designed for Digital Predistortion Error Correction Systems
  • Optimized for Doherty Applications
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Application Notes
文档名称 文档类型 软件 描述
MRF8S21140HR5PDF下载 点击下载 点击下载 AN1955
Engineering Bulletins
文档名称 文档类型 软件 描述
MRF8S21140HR5PDF下载 点击下载 点击下载 EB212
Packaging Information
文档名称 文档类型 软件 描述
MRF8S21140HR5PDF下载 点击下载 点击下载 98ASB15607C
MRF8S21140HR5PDF下载 点击下载 点击下载 98ASB16718C
Selector Guides
文档名称 文档类型 软件 描述
MRF8S21140HR5PDF下载 点击下载 点击下载 SG46
Data Sheets
文档名称 文档类型 软件 描述
MRF8S21140HR5PDF下载 点击下载 点击下载 MRF8S21140H