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MRF8S21172HR3

厂商:
Freescale
类别:
RF功率晶体管
包装:
-
封装:
NI-780
无铅情况/ROHS:
无铅
描述:
HV8 2.1GHZ 42W NI780H

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  • 参数
  • 描述
  • 文档
参数 数值
2nd Level Interconnect e4
Material Composition Declaration (MCD) Download MCD Report Download MCD Report
Package Length (nominal) (mm) 34.040
Application LTE / W-CDMA
Export Control Classification Number (US) 5A991
Maximum Time at Peak Temperature (s) 40
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 42 @ AVG
Thermal Resistance (Spec) (°CW) 0.41
Package Width (nominal) (mm) 9.780
Status Active
Class AB
Matching I/O
Supply Voltage (Typ) (V) 28
Device Production Availability 13 Jun 2011
Frequency Band (Min-Max) (MHz) 2110 to 2170
Peak Package Body Temperature (PPT)(°C) 260
Budgetary Price($US) -
Frequency (Max) (MHz) 2170
Minimum Package Quantity (MPQ) 250
Package Thickness (nominal) (mm) 3.760
Power Gain (Typ) (dB) @ f (MHz) 17.5 @ 2170
Description HV8 2.1GHZ 42W NI780H
RoHS Certificate of Analysis (CoA) Contact Us
Harmonized Tariff (US) Disclaimer 8541.29.0075
REACH SVHC Freescale REACH Statement
Die Technology LDMOS
Application/Qualification Tier COMMERCIAL, INDUSTRIAL
Device Sample Availability 13 Jun 2011
Material Type Tested Packaged Device
POQ Container REEL
Life Cycle Description (code) PRODUCT RAPID GROWTH
Part Number MRF8S21172HR3
Device Weight (g) 6.43960
Halogen Free Yes
P1dB (Typ) (W) 132
Package Description and Mechanical Drawing NI-780
Pin/Lead/Ball Count 3
Sample Exception Availability Y
Tape & Reel Yes
Number of Reflow Cycles 3
Test Signal W-CDMA
Efficiency (Typ) (%) 30.6
Micron Size (μm) 6
MPQ Container REEL
Preferred Order Quantity (POQ) 250

The MRF8S21172HR3 and MRF8S21172HSR3 are designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. View Product Image

Features

  • Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 1350 mA, Pout = 42 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
  • Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 193 Watts CW Output Power (3 dB Input Overdrive from Rated Pout)
  • Typical Pout @ 1 dB Compression Point 132 Watts CW
  • 100% PAR Tested for Guaranteed Output Power Capability
  • Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters
  • Internally Matched for Ease of Use
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Designed for Digital Predistortion Error Correction Systems
  • Optimized for Doherty Applications
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.

Data Sheets
文档名称 文档类型 软件 描述
MRF8S21172HR3PDF下载 点击下载 点击下载 MRF8S21172H
Selector Guides
文档名称 文档类型 软件 描述
MRF8S21172HR3PDF下载 点击下载 点击下载 SG46
Engineering Bulletins
文档名称 文档类型 软件 描述
MRF8S21172HR3PDF下载 点击下载 点击下载 EB212
Application Notes
文档名称 文档类型 软件 描述
MRF8S21172HR3PDF下载 点击下载 点击下载 AN1955
Packaging Information
文档名称 文档类型 软件 描述
MRF8S21172HR3PDF下载 点击下载 点击下载 98ASB16718C
MRF8S21172HR3PDF下载 点击下载 点击下载 98ASB15607C