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MRF8S21172HSR3

厂商:
Freescale
类别:
RF功率晶体管
包装:
-
封装:
NI-780S
无铅情况/ROHS:
无铅
描述:
HV8 2.1GHZ 42W NI780HS

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  • 参数
  • 描述
  • 文档
参数 数值
Device Weight (g) 4.63120
Material Type Tested Packaged Device
Status Active
Harmonized Tariff (US) Disclaimer 8541.29.0075
Maximum Time at Peak Temperature (s) 40
Frequency Band (Min-Max) (MHz) 2110 to 2170
Number of Reflow Cycles 3
Package Description and Mechanical Drawing NI-780S
Package Length (nominal) (mm) 20.570
Peak Package Body Temperature (PPT)(°C) 260
Application/Qualification Tier COMMERCIAL, INDUSTRIAL
Die Technology LDMOS
POQ Container REEL
Part Number MRF8S21172HSR3
MPQ Container REEL
Tape & Reel Yes
Class AB
Device Sample Availability 13 Jun 2011
Life Cycle Description (code) PRODUCT RAPID GROWTH
Matching I/O
Power Gain (Typ) (dB) @ f (MHz) 17.5 @ 2170
Supply Voltage (Typ) (V) 28
Device Production Availability 13 Jun 2011
Minimum Package Quantity (MPQ) 250
REACH SVHC Freescale REACH Statement
Application LTE / W-CDMA
Efficiency (Typ) (%) 30.6
Frequency (Max) (MHz) 2170
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 42 @ AVG
Package Thickness (nominal) (mm) 3.760
Micron Size (μm) 6
Test Signal W-CDMA
2nd Level Interconnect e4
Package Width (nominal) (mm) 9.780
Budgetary Price($US) -
Material Composition Declaration (MCD) Download MCD Report Download MCD Report
Preferred Order Quantity (POQ) 250
Description HV8 2.1GHZ 42W NI780HS
Sample Exception Availability Y
Thermal Resistance (Spec) (°CW) 0.41
Export Control Classification Number (US) 5A991
Halogen Free Yes
P1dB (Typ) (W) 132
Pin/Lead/Ball Count 3
RoHS Certificate of Analysis (CoA) Contact Us

The MRF8S21172HR3 and MRF8S21172HSR3 are designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. View Product Image

Features

  • Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 1350 mA, Pout = 42 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
  • Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 193 Watts CW Output Power (3 dB Input Overdrive from Rated Pout)
  • Typical Pout @ 1 dB Compression Point 132 Watts CW
  • 100% PAR Tested for Guaranteed Output Power Capability
  • Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters
  • Internally Matched for Ease of Use
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Designed for Digital Predistortion Error Correction Systems
  • Optimized for Doherty Applications
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.

Engineering Bulletins
文档名称 文档类型 软件 描述
MRF8S21172HSR3PDF下载 点击下载 点击下载 EB212
Application Notes
文档名称 文档类型 软件 描述
MRF8S21172HSR3PDF下载 点击下载 点击下载 AN1955
Selector Guides
文档名称 文档类型 软件 描述
MRF8S21172HSR3PDF下载 点击下载 点击下载 SG46
Data Sheets
文档名称 文档类型 软件 描述
MRF8S21172HSR3PDF下载 点击下载 点击下载 MRF8S21172H
Packaging Information
文档名称 文档类型 软件 描述
MRF8S21172HSR3PDF下载 点击下载 点击下载 98ASB16718C
MRF8S21172HSR3PDF下载 点击下载 点击下载 98ASB15607C