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MRF8S23120HSR5

厂商:
Freescale
类别:
RF功率晶体管
包装:
-
封装:
NI-780S
无铅情况/ROHS:
无铅
描述:
HV8 2.3GHZ 120W NI780HS

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  • 参数
  • 描述
  • 文档
参数 数值
Package Thickness (nominal) (mm) 3.760
Power Gain (Typ) (dB) @ f (MHz) 16 @ 2300
Material Type Tested Packaged Device
Number of Reflow Cycles 3
Test Signal W-CDMA
Halogen Free Yes
Pin/Lead/Ball Count 3
MPQ Container REEL
Application/Qualification Tier COMMERCIAL, INDUSTRIAL
Tape & Reel Yes
Frequency (Max) (MHz) 2400
Harmonized Tariff (US) Disclaimer 8541.29.0075
Life Cycle Description (code) PRODUCT RAPID GROWTH
Matching I/O
Part Number MRF8S23120HSR5
Die Technology LDMOS
Micron Size (μm) 6
Minimum Package Quantity (MPQ) 50
POQ Container REEL
Description HV8 2.3GHZ 120W NI780HS
2nd Level Interconnect e4
REACH SVHC Freescale REACH Statement
Thermal Resistance (Spec) (°CW) 0.5
Status Active
Budgetary Price($US) -
Maximum Time at Peak Temperature (s) 40
P1dB (Typ) (W) 107
Supply Voltage (Typ) (V) 28
Frequency Band (Min-Max) (MHz) 2300 to 2400
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 28 @ AVG
Export Control Classification Number (US) EAR99
Preferred Order Quantity (POQ) 50
Efficiency (Typ) (%) 31.9
Package Width (nominal) (mm) 9.780
Leadtime (weeks) 8
Class AB
Device Weight (g) 4.76300
RoHS Certificate of Analysis (CoA) Contact Us
Application LTE
Material Composition Declaration (MCD) Download MCD Report Download MCD Report
Sample Exception Availability N
Package Description and Mechanical Drawing NI-780S
Package Length (nominal) (mm) 20.570
Peak Package Body Temperature (PPT)(°C) 260

The MRF8S23120HR3 and MRF8S23120HSR3 are designed for LTE base station applications with frequencies from 2300 to 2400 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. View Product Image

Features

  • Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 800 mA, Pout = 28 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
  • Capable of Handling 5:1 VSWR, @ 30 Vdc, 2350 MHz, 138 Watts CW Output Power (2 dB Input Overdrive from Rated Pout)
  • Typical Pout @ 1 dB Compression Point 107 Watts CW
  • 100% PAR Tested for Guaranteed Output Power Capability
  • Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters
  • Internally Matched for Ease of Use
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Designed for Digital Predistortion Error Correction Systems
  • Optimized for Doherty Applications
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.

Engineering Bulletins
文档名称 文档类型 软件 描述
MRF8S23120HSR5PDF下载 点击下载 点击下载 EB212
Selector Guides
文档名称 文档类型 软件 描述
MRF8S23120HSR5PDF下载 点击下载 点击下载 SG46
Packaging Information
文档名称 文档类型 软件 描述
MRF8S23120HSR5PDF下载 点击下载 点击下载 98ASB15607C
MRF8S23120HSR5PDF下载 点击下载 点击下载 98ASB16718C
Application Notes
文档名称 文档类型 软件 描述
MRF8S23120HSR5PDF下载 点击下载 点击下载 AN1955
Data Sheets
文档名称 文档类型 软件 描述
MRF8S23120HSR5PDF下载 点击下载 点击下载 MRF8S23120H