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MRF8S26120HSR5

厂商:
Freescale
类别:
RF功率晶体管
包装:
-
封装:
NI-780S
无铅情况/ROHS:
无铅
描述:
HV8 2.6GHZ 27W NI780S

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  • 参数
  • 描述
  • 文档
参数 数值
Number of Reflow Cycles 3
Life Cycle Description (code) PRODUCT RAPID GROWTH
Matching I/O
Thermal Resistance (Spec) (°CW) 0.53
Frequency Band (Min-Max) (MHz) 2620 to 2690
Package Thickness (nominal) (mm) 3.760
Power Gain (Typ) (dB) @ f (MHz) 15.6 @ 2690
Application/Qualification Tier COMMERCIAL, INDUSTRIAL
Die Technology LDMOS
Material Type Tested Packaged Device
POQ Container REEL
Harmonized Tariff (US) Disclaimer 8541.29.0075
MPQ Container REEL
Application LTE / W-CDMA
Frequency (Max) (MHz) 2690
Leadtime (weeks) 8
Status Active
Budgetary Price($US) -
Maximum Time at Peak Temperature (s) 40
Device Weight (g) 4.76300
Package Description and Mechanical Drawing NI-780S
Package Length (nominal) (mm) 20.570
Peak Package Body Temperature (PPT)(°C) 260
Tape & Reel Yes
Halogen Free Yes
Pin/Lead/Ball Count 3
RoHS Certificate of Analysis (CoA) Contact Us
Sample Exception Availability N
Micron Size (μm) 6
Minimum Package Quantity (MPQ) 50
Test Signal W-CDMA
Export Control Classification Number (US) 5A991
Material Composition Declaration (MCD) Download MCD Report Download MCD Report
Part Number MRF8S26120HSR5
Class AB
Preferred Order Quantity (POQ) 50
Supply Voltage (Typ) (V) 28
Package Width (nominal) (mm) 9.780
REACH SVHC Freescale REACH Statement
Efficiency (Typ) (%) 31.1
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 28 @ AVG
Description HV8 2.6GHZ 27W NI780S
2nd Level Interconnect e4
P1dB (Typ) (W) 110

The MRF8S26120HR3 and MRF8S26120HSR3 are designed for W-CDMA and LTE base station applications with frequencies from 2620 to 2690 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. View Product Image

Features

  • Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 900 mA, Pout = 28 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
  • Capable of Handling 10:1 VSWR, @ 32 Vdc, 2655 MHz, 135 Watts CW Output Power (3 dB Input Overdrive from Rated Pout)
  • Typical Pout @ 1 dB Compression Point 110 Watts CW
  • 100% PAR Tested for Guaranteed Output Power Capability
  • Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters
  • Internally Matched for Ease of Use
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Designed for Digital Predistortion Error Correction Systems
  • Optimized for Doherty Applications
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.

Engineering Bulletins
文档名称 文档类型 软件 描述
MRF8S26120HSR5PDF下载 点击下载 点击下载 EB212
Application Notes
文档名称 文档类型 软件 描述
MRF8S26120HSR5PDF下载 点击下载 点击下载 AN1955
Selector Guides
文档名称 文档类型 软件 描述
MRF8S26120HSR5PDF下载 点击下载 点击下载 SG46
Data Sheets
文档名称 文档类型 软件 描述
MRF8S26120HSR5PDF下载 点击下载 点击下载 MRF8S26120H
Packaging Information
文档名称 文档类型 软件 描述
MRF8S26120HSR5PDF下载 点击下载 点击下载 98ASB15607C
MRF8S26120HSR5PDF下载 点击下载 点击下载 98ASB16718C