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MRF8S9100HR3

厂商:
Freescale
类别:
RF功率晶体管
包装:
-
封装:
NI-780
无铅情况/ROHS:
无铅
描述:
HV8 900MHZ 100W NI780H

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  • 参数
  • 描述
  • 文档
参数 数值
Leadtime (weeks) 8
Matching Input
Device Sample Availability 15 Jun 2010
Device Weight (g) 6.41040
Harmonized Tariff (US) Disclaimer 8541.29.0075
Micron Size (μm) .35
Package Width (nominal) (mm) 9.780
Class AB
P1dB (Typ) (W) 108
RoHS Certificate of Analysis (CoA) Contact Us
Test Signal 1-Tone
Supply Voltage (Typ) (V) 28
Description HV8 900MHZ 100W NI780H
Tape & Reel Yes
Frequency (Max) (MHz) 960
Thermal Resistance (Spec) (°CW) 0.65
Part Number MRF8S9100HR3
Status Active
Material Composition Declaration (MCD) Download MCD Report Download MCD Report
Power Gain (Typ) (dB) @ f (MHz) 19.3 @ 920
Device Production Availability 15 Jun 2010
Efficiency (Typ) (%) 51.6
Export Control Classification Number (US) 5A991
Life Cycle Description (code) PRODUCT STABLE GROWTH/MATURITY
Preferred Order Quantity (POQ) 250
Halogen Free Yes
MPQ Container REEL
Package Description and Mechanical Drawing NI-780
Package Length (nominal) (mm) 34.040
Pin/Lead/Ball Count 3
Sample Exception Availability Y
Die Technology LDMOS
Application/Qualification Tier COMMERCIAL, INDUSTRIAL
Package Thickness (nominal) (mm) 3.760
REACH SVHC Freescale REACH Statement
Budgetary Price($US) -
Minimum Package Quantity (MPQ) 250
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 72 @ CW
POQ Container REEL
2nd Level Interconnect e4
Frequency Band (Min-Max) (MHz) 920 to 960
Material Type Tested Packaged Device

The MRF8S9100HR3 and MRF8S9100HSR3 are designed for GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. View Product Image

Features

  • Typical GSM Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 72 Watts CW
  • Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 133 Watts CW Output Power (3 dB Input Overdrive from Rated Pout)
  • Typical Pout @ 1 dB Compression Point 108 Watts CW
  • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 700 mA, Pout = 45 Watts Avg.
  • Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters
  • Internally Matched for Ease of Use
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.




Application Notes
文档名称 文档类型 软件 描述
MRF8S9100HR3PDF下载 点击下载 点击下载 AN1955
Data Sheets
文档名称 文档类型 软件 描述
MRF8S9100HR3PDF下载 点击下载 点击下载 MRF8S9100H
Engineering Bulletins
文档名称 文档类型 软件 描述
MRF8S9100HR3PDF下载 点击下载 点击下载 EB212
Packaging Information
文档名称 文档类型 软件 描述
MRF8S9100HR3PDF下载 点击下载 点击下载 98ASB15607C
MRF8S9100HR3PDF下载 点击下载 点击下载 98ASB16718C
Selector Guides
文档名称 文档类型 软件 描述
MRF8S9100HR3PDF下载 点击下载 点击下载 SG46