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MRF8S9170NR3

厂商:
Freescale
类别:
RF功率晶体管
包装:
-
封装:
OM780-2 PLASTICS
无铅情况/ROHS:
无铅
描述:
HV8 900MHz 50W OM780-2

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  • 参数
  • 描述
  • 文档
参数 数值
Package Width (nominal) (mm) 9.960
Power Gain (Typ) (dB) @ f (MHz) 19.3 @ 920
Export Control Classification Number (US) 5A991
Floor Life 168 HOURS
Life Cycle Description (code) PRODUCT STABLE GROWTH/MATURITY
Pin/Lead/Ball Count 3
Device Weight (g) 3.08110
Frequency (Max) (MHz) 960
RoHS Certificate of Analysis (CoA) Contact Us
Device Production Availability 15 Jun 2010
Material Type Tested Packaged Device
Number of Reflow Cycles 3
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 50 @ AVG
POQ Container REEL
Leadtime (weeks) 8
Package Description and Mechanical Drawing OM780-2 PLASTICS
Moisture Sensitivity Level (MSL) 3
UL94 (plastics flammability test) V0: burning stops within 10 seconds on a vertical specimen; no drips allowed
Sample Exception Availability Y
Die Technology LDMOS
MPQ Container REEL
Efficiency (Typ) (%) 36.5
Minimum Package Quantity (MPQ) 250
Package Thickness (nominal) (mm) 3.810
REACH SVHC Freescale REACH Statement
Thermal Resistance (Spec) (°CW) 0.38
Description HV8 900MHz 50W OM780-2
Status Active
Device Sample Availability 15 Jun 2010
Matching I/O
Maximum Time at Peak Temperature (s) 40
Tape & Reel Yes
Part Number MRF8S9170NR3
Package Length (nominal) (mm) 20.570
Peak Package Body Temperature (PPT)(°C) 260
Preferred Order Quantity (POQ) 250
Test Signal W-CDMA
2nd Level Interconnect e3
Budgetary Price($US) -
Frequency Band (Min-Max) (MHz) 920 to 960
Material Composition Declaration (MCD) Download MCD Report Download MCD Report
P1dB (Typ) (W) 177
Class AB
Supply Voltage (Typ) (V) 28
Application/Qualification Tier COMMERCIAL, INDUSTRIAL
Harmonized Tariff (US) Disclaimer 8541.29.0075
Micron Size (μm) .35

The MRF8S9170NR3 is designed for base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. View Product Image

Features

  • Typical Single–Carrier W–CDMA Performance: VDD = 28 Volts, IDQ = 1000 mA, Pout = 50 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
  • Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 250 Watts CW Output Power (3 dB Input Overdrive from Rated Pout)
  • Typical Pout @ 1 dB Compression Point 177 Watts CW
  • 100% PAR Tested for Guaranteed Output Power Capability
  • Characterized with Series Equivalent Large–Signal Impedance Parameters and Common Source S-Parameters
  • Internally Matched for Ease of Use
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Designed for Digital Predistortion Error Correction Systems
  • Optimized for Doherty Applications
  • 225°C Capable Plastic Package
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.

Application Notes
文档名称 文档类型 软件 描述
MRF8S9170NR3PDF下载 点击下载 点击下载 AN1907
MRF8S9170NR3PDF下载 点击下载 点击下载 AN1955
MRF8S9170NR3PDF下载 点击下载 点击下载 AN3789
Engineering Bulletins
文档名称 文档类型 软件 描述
MRF8S9170NR3PDF下载 点击下载 点击下载 EB212
Packaging Information
文档名称 文档类型 软件 描述
MRF8S9170NR3PDF下载 点击下载 点击下载 98ASA10831D
Selector Guides
文档名称 文档类型 软件 描述
MRF8S9170NR3PDF下载 点击下载 点击下载 SG46
Data Sheets
文档名称 文档类型 软件 描述
MRF8S9170NR3PDF下载 点击下载 点击下载 MRF8S9170N