详细描述
The RFGA2012 is specifically designed to achieve high OIP3 with minimal DC power. Ultra-linear performance has been demonstated in standard frequency bands within 150MHz to 3GHz. The RFGA2012 features a VBIAS pin that allows users to optimize the quiescent current for specific requirements. The VBIAS pin also serves as a power-down pin. The RFGA2012 offers 1000V HBM ESD ruggedness and is manufactured using RFMD's InGaP HBT process to minimize Beta process variation.
特点
High OIP3?=?35dBm at 1960MHz
Low DC Power: 3.3V, 23mA
Low NF = 1.6dB at 1960MHz
50MHz to 3000MHz Operation
Power Down Capability
Class 1C (1000V) HBM ESD Rating
MSL 1 Rating
Common Platform Compatible