The MMZ25332BT1 is a 2-stage, high linearity InGaP HBT broadband amplifier designed for femtocell, picocell, WLAN (802.11g/n), W-CDMA, TD-SCDMA and LTE wireless broadband applications. It provides exceptional linearity for LTE and W-CDMA air interfaces with an ACPR of -50 dBc at an output power of up to 22 dBm, covering frequencies from 1800-2800 MHz. It operates from a supply voltage of 3 to 5 volts. The amplifier is fully input matched, requires minimal external matching on the output and is housed in a cost-effective, surface mount QFN 3x3 package. The device offers state-of-the-art reliability, ruggedness, temperature stability and ESD performance.
W-CDMA, LTE Performance
Typical Performance: V
CC1 = V
CC2 = V
BIAS = 5 Volts, I
CQ = 400 mA
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Frequency
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Pout
(dBm)
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Gps
(dB)
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ACPR
(dBc)
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PAE
(%)
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Test Signal
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2140 MHz
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22
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27.0
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–50.0
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7.0
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W-CDMA
|
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2620 MHz
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21
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26.0
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–50.0
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5.0
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LTE 20 MHz
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View Product ImageTypical Performance: V
CC1 = V
CC2 = V
BIAS = 5 Volts, I
CQ = 400 mA
Features
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Frequency: 1800-2800 MHz
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P1dB: 33 dBm @ 2500 MHz
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Power Gain: 26.5 dB @ 2500 MHz
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OIP3: 48 dBm @ 2500 MHz
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EVM < 3% @ 26.5 dBm Pout, WiMAX (802.16e)
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Active Bias Control (adjustable externally)
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Single 3 to 5 Volt Supply
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Single-ended Power Detector
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Cost-effective QFN Surface Mount Package
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RoHS Compliant
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In Tape and Reel. T1 Suffix = 1000 Units, 12 mm Tape Width, 7 inch Reel.