产品分类 > 存储器 > 串行闪存 > AT45DB021E-SHN-B

可能感兴趣的商品

最近浏览过的商品

pic

AT45DB021E-SHN-B

厂商:
Atmel
类别:
串行闪存
包装:
-
封装:
SOIC (208mil) 8S2 8
无铅情况/ROHS:
-
描述:
2-Mbit 1.65V Minimum DataFlash Me...

我要询价我要收藏

  • 参数
  • 描述
参数 数值
Operating Voltage (Vcc) 1.65
Speed 70 MHz
Page Size (Bytes) 256/264
I/O Pins 8
Interface Type SPI
Density 2Mb

特点
Offset Voltage – Prime Grade: 60μV Max
Offset Voltage – Low Cost Grade (Including Surface Mount Dual/Quad): 75μV Max
Offset Voltage Drift: 0.5μV/°C Max
Input Bias Current: 250pA Max
0.1Hz to 10Hz Noise: 0.3μV P-P , 2.2pA P-P
Supply Current per Amplifier: 400μA Max
CMRR: 120dB Min
Voltage Gain: 1 Million Min
Guaranteed Specs with ±1.0V Supplies
Guaranteed Matching Specifications
SO-8 Package – Standard Pinout
LT1114 in Narrow Surface Mount Package

典型应用

典型应用

描述
The LT?1112 dual and LT1114 quad op amps achieve a new standard in combining low cost and outstanding precision specifications.
The performance of the selected prime grades matches or exceeds competitive devices. In the design of the LT1112/ LT1114 however, particular emphasis has been placed on optimizing performance in the low cost plastic and SO packages. For example, the 75μV maximum offset voltage in these low cost packages is the lowest on any dual or quad non-chopper op amp.
The LT1112/LT1114 also provide a full set of matching specifications, facilitating their use in such matching dependent applications as two and three op amp instrumentation amplifiers.
Another set of specifications is furnished at ±1V supplies. This, combined with the low 320μA supply current per amplifier, allows the LT1112/LT1114 to be powered by two nearly discharged AA cells.
Protected by U.S. Patents 4,575,685; 4,775,884 and 4,837,496

请选择文档类型: