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W948D2FBJX6E

厂商:
Winbond
类别:
SDRAM
包装:
-
封装:
90VFBGA
无铅情况/ROHS:
无铅
描述:
This is a 256Mb Low Power DDR SDR...

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  • 参数
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参数 数值
Voltage 1.8V / 1.8V
Package 90VFBGA
Status P
Density 256 Mbit
Organization x32
RoHS Y
Speed Grade 166MHz, -25 to 85C

Description
The W19B320AT/B is a 32Mbit, 2.7~3.6-volt flexible bank CMOS flash memory organized as 4M x 8 or 2M × 16 bits. The word-wide (× 16) data appears on DQ15-DQ0, and byte-wide (x 8) data appears on DQ7-DQ0. The device can be programmed and erased in-system with a standard 3.0-volt power supply. A 12-volt VPP is not required. The unique cell architecture of the W19B320AT/B results in fast program/erase operations with extremely low current consumption (compared to other comparable 3-volt flash memory products). The device can also be programmed and erased by using standard EPROM programmers.
Features
Manufactured on WinStack-S 0.18um process technology
Operating Voltage: 3.0V (2.7V-3.6V)
Organization: 4Mbx8 / 2Mbx16
Speed: 70ns
Simultaneous Read/Write (Flexible bank)?
Boot Block: Top & Bottom
Flex Bank: 4Mb / 12 Mb / 12Mb / 4Mb? ??????Bank1: 8x8KB/4Kw+7x64KB/32Kw ??????Bank2: 24x64KB/32Kw? ??????Bank3: 24x64KB/32Kw? ??????Bank4: 8x64KB/Kw
Secured Silicon Sector (256 Byte)
Available packages: 48-pin TSOP and 48-ball TFBGA (6x8mm)

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