Description
The W966D6E is a 64M byte、CMOS pseudo-static random access memories developed for low-power、portable applications、organized as 4 Meg x 16 bits. Develop for low power、portable application.
Features
VCC、VCCQ Voltages:1.7V–1.95V VCC、1.7V–1.95V VCCQ
Random access time: 70ns
Burst mode READ and WRITE access:
4、8、16、or 32 words、or continuous burst
Burst wrap or sequential、Max clock rate: 133 MHz (tCLK = 7.5ns)
On-chip temperature compensated refresh (TCR)
Partial array refresh (PAR)
Deep power-down (DPD) mode
Operating temperature rang: -30C~85C