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W9412G6JH

厂商:
Winbond
类别:
利基动态随机存取内存
包装:
-
封装:
Packaged in TSOP II 66-pin, using Lead free materials with RoHS compliant
无铅情况/ROHS:
无铅
描述:
The W9412G6JH is a 128M DDR SDRAM...

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参数 数值
Voltage 2.4V~2.7V
Voltage 2.5V±0.2V
Package Packaged in TSOP II 66-pin, using Lead free materials with RoHS compliant
Status P
Organization 8Mbitx16/4 Banks
RoHS Y
Speed Grade CL3//-5/-5I/-5K/200 MHz
Speed Grade CL3//-6I/200 MHz
Speed Grade CL3/CL4//-4/250 MHz

Description
The W9725G2JB is a 256M bits DDR2 SDRAM, and speed involving? -25 and -3 Status: Mass Production
Features
Power Supply: VDD, VDDQ = 1.8 V ± 0.1 V
Double Data Rate architecture: two data transfers per clock cycle
CAS Latency: 3, 4, 5, 6 and?6
Burst Length: 4 and 8
Bi-directional, differential data strobes (DQS and /DQS ) are transmitted / received with data
Edge-aligned with Read data and center-aligned with Write data
DLL aligns DQ and DQS transitions with clock
Differential clock inputs (CLK and /CLK)
Data masks (DM) for write data
Commands entered on each positive CLK edge, data and data mask are referenced to both edges of /DQS
Posted /CAS programmable additive latency supported to make command and data bus efficiency
Read Latency = Additive Latency plus CAS Latency (RL = AL + CL)
Off-Chip-Driver impedance adjustment (OCD) and On-Die-Termination (ODT) for better signal quality
Auto-precharge operation for read and write bursts
Auto Refresh and Self Refresh modes
Precharged Power Down and Active Power Down
Write Data Mask
Write Latency = Read Latency - 1 (WL = RL - 1)
Interface: SSTL_18

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