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W9425G6EH

厂商:
Winbond
类别:
利基动态随机存取内存
包装:
-
封装:
Packaged in TSOP II 66-pin, using Lead free materials with RoHS compliant
无铅情况/ROHS:
无铅
描述:
The W9425G6EH is a 256M DDR SDRAM...

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  • 参数
  • 描述
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参数 数值
Organization 16Mbitx16
Voltage 2.6V ±0.1V 2.5V ±0.2V
Speed -4_250MHz_CL3,  -5/-5I_200MHz_CL3, -6/-6I_16MHz_CL2.5
Package Packaged in TSOP II 66-pin, using Lead free materials with RoHS compliant
Status NRFND
RoHS Y
Voltage 2.5V ±0.2V
Voltage 2.6V ±0.1V
Package Packaged in TSOP II 66-pin, using Lead free materials with RoHS compliant
Status NRFND
Organization 16Mbitx16/4 Banks
RoHS Y
Speed Grade CL2.5//-6/-6I/166 MHz
Speed Grade CL3//-4/250 MHz
Speed Grade CL3//-5/-5I/200 MHz

Description
The W971GG6JB is a 1G bits DDR2 SDRAM, and speed involving -18, -25, 25L, 25I, 25A, 25K?and -3. Status: Mass Production
Features
Power Supply: VDD, VDDQ = 1.8 V ± 0.1 V Double Data Rate architecture: two data transfers per clock cycle CAS Latency: 3, 4, 5, 6 and 7 Burst Length: 4 and 8 Bi-directional, differential data strobes (DQS and /DQS ) are transmitted / received with data Edge-aligned with Read data and center-aligned with Write data DLL aligns DQ and DQS transitions with clock Differential clock inputs (CLK and /CLK) Data masks (DM) for write data Commands entered on each positive CLK edge, data and data mask are referenced to both edges of /DQS Posted /CAS programmable additive latency supported to make command and data bus efficiency Read Latency = Additive Latency plus CAS Latency (RL = AL + CL) Off-Chip-Driver impedance adjustment (OCD) and On-Die-Termination (ODT) for better signal quality Auto-precharge operation for read and write bursts Auto Refresh and Self Refresh modes Precharged Power Down and Active Power Down Write Data Mask Write Latency = Read Latency - 1 (WL = RL - 1) Interface: SSTL_18

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