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W9812G6IH

厂商:
Winbond
类别:
利基动态随机存取内存
包装:
-
封装:
TSOP II 54-pin, 400 mil using Lead free materials with RoHS compliant
无铅情况/ROHS:
无铅
描述:
The W9812G6IH is a 128M SDRAM and...

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  • 参数
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参数 数值
Organization 8Mbit x16
Voltage 3.3V±0.3V
Speed -5_200MHz_CL3, -6/-6C/-6I/-6A_166MHz_CL3, -75_133MHz_CL3
Package TSOP II 54-pin, 400 mil using Lead free materials with RoHS compliant
Status NRFND
RoHS Y
Voltage 3.3V±0.3V
Package TSOP II 54-pin, 400 mil using Lead free materials with RoHS compliant
Status NRFND
Organization 8Mbit x16/4 Banks
RoHS Y
Speed Grade CL3//-5/200 MHz
Speed Grade CL3//-6/-6C/-6I/-6A/166 MHz
Speed Grade CL3//-75/133 MHz

Description
The W9812G6IH is a 128M SDRAM and speed involving -5/-6/-6C/-6I/-6A/-75 Status: Not recommended for new design.
Features
3.3V± 0.3V power supply
Up to 200 MHz Clock Frequency
2,097,152 Words × 4 banks × 16 bits organization
Self Refresh Mode
CAS Latency: 2 and 3
Burst Length: 1, 2, 4, 8 and full page
Burst Read, Single Writes Mode
Byte Data Controlled by LDQM, UDQM
Auto-precharge and controlled precharge
4K refresh cycles/64 mS
Interface: LVTTL

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