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XC6SLX45

厂商:
Xilinx
类别:
Spartan-6
包装:
-
封装:
CSG324(15 x 15),CSG484(19 x 19),FGG484(23 x 23),FGG676(27 x 27)
无铅情况/ROHS:
无铅
描述:
XC6SLX45

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  • 参数
  • 描述
  • 文档
参数 数值
电源电压 1.14 V ~ 1.26 V
工作温度 -40°C ~ 100°C
安装类型 表面贴装
RoHS 无铅 / 符合限制有害物质指令(RoHS)规范要求
类别 集成电路 (IC)
标准包装 1
家庭 嵌入式 - FPGA(现场可编程门阵列)
LAB/CLB数 6822
RAM 位总计 2088Kb
逻辑元件/单元数 43661
供应商设备封装 CSG324(15 x 15),CSG484(19 x 19),FGG484(23 x 23),FGG676(27 x 27)

The MMZ09312BT1 is a 2-stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station applications as well as an output stage in femtocell or repeater applications. It is suitable for applications with frequencies from 400 to 1000 MHz such as CDMA, GSM, LTE and ZigBee® at operating voltages from 3 to 5 Volts. The amplifier is housed in a cost-effective, surface mount QFN plastic package. View Product Image

Features

  • Typical Performance: VCC1 = VCC2 = VBIAS = 5 Volts, ICQ = 74 mA
  • Frequency: 400-1000 MHz
  • P1dB: 29.6 dBm @ 900 MHz
  • Power Gain: 31.7 dB @ 900 MHz
  • OIP3: 42 dBm @ 900 MHz
  • Active Bias Control (adjustable externally)
  • Single 3 to 5 Volt Supply
  • Performs Well with Digital Predistortion Systems
  • Single-ended Power Detector
  • Cost-effective QFN Surface Mount Package
  • RoHS Compliant
  • In Tape and Reel. T1 Suffix = 1000 Units, 12 mm Tape Width, 7 inch Reel.

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