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AQV251

厂商:
Panasonic
类别:
PhotoMOS(MOSFET输出光电耦合器)
包装:
Tube packing
封装:
DIP6
无铅情况/ROHS:
无铅
描述:
HE 1a(6pin)

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  • 参数
  • 描述
参数 数值
耐电压 1500V AC
端子形状 Through Hole
封装 DIP6
输入/输出间端子容量(平均) 1.3pF
动作时间(平均) 1.7ms
包装方式 Tube packing
国外标准 UL, C-UL
全部允许损耗 410mW
负载电压 40 V
触点结构 1a
导通电阻(最大) 1 ohm
复位时间(平均) 0.07ms
输入/输出间端子容量(最大) 3pF
推荐动作条件(输入LED电流) 5mA
导通电阻(平均) 0.6 ohm
开路状态漏电流(最大) 1μA
输入/输出绝缘电阻(最小) 1000 M ohm
输出端子间容量(平均) 350 pF
连续负载电流 0.5A
部允许损耗 75mW
最大正向电流 1A
动作LED电流(平均) 0.9mA
LED压降(最大) 1.5V
复位LED电流(最小) 0.4mA
最大允许LED电流 50mA
LED反向电压 5V
动作LED电流(最大) 3mA
复位LED电流(平均) 0.8mA
保存温度 -40℃~+100℃
使用环境温度 -40℃~+85℃
特点 低导通电阻与经济性兼顾,品种丰富的Photo MOS
订货产品号 AQV251

特点
8V to 48V Power Supply Range
Protected from -15V to 60V Supply Transients
Fully Enhances N-Channel MOSFET Switches
Individual Short-Circuit Protection
Individual Automatic Restart Timers
Programmable Current Limit, Delay Time, and Auto-Restart Period
Voltage-Limited Gate Drive
Defaults to OFF State with Open Input
Flowthrough Input to Output Pinout
Available in 20-Lead DIP or SOL Package

典型应用

典型应用

描述
Please download the following Change Notice concerning SOIC, PDIP and CERDIP Wide Body Packages. sntopm.pdf
The LT1161 is a quad high-side gate driver allowing the use of low cost N-channel power MOSFETs for high-side switching applications. It has four independent switch channels, each containing a completely self-contained charge pump to fully enhance an N-channel MOSFET switch with no external components.
Also included in each switch channel is a drain sense comparator that is used to sense switch current. When preset current level is exceeded, the switch is turned off. The switch remains off for a period of time set by an external timing capacitor and then automatically attempts to restart. If the fault is still present, this cycle repeats until the fault is removed, thus protecting the MOSFET.
The LT1161 has been specifically designed for harsh operating environments such as industrial, avionics, and automotive applications where poor supply regulation and/or transients may be present. The device will not sustain damage from supply voltages of -15V to 60V.
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