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AQW227NS

厂商:
Panasonic
类别:
PhotoMOS(MOSFET输出光电耦合器)
包装:
Tube packing
封装:
SOP8
无铅情况/ROHS:
无铅
描述:
RF SOP2a 低导通电阻

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  • 参数
  • 描述
参数 数值
耐电压 1500V AC
端子形状 Surface-Mount
封装 SOP8
输入/输出间端子容量(平均) 0.8pF
动作时间(平均) 0.25ms
包装方式 Tube packing
国外标准 UL, C-UL
全部允许损耗 650mW
负载电压 200 V
触点结构 2a
导通电阻(最大) 50 ohm
复位时间(平均) 0.08ms
输入/输出间端子容量(最大) 1.5pF
推荐动作条件(输入LED电流) 5mA
导通电阻(平均) 30 ohm
开路状态漏电流(最大) 10nA
输入/输出绝缘电阻(最小) 1000 M ohm
输出端子间容量(平均) 10 pF
连续负载电流 0.05A
部允许损耗 75mW
最大正向电流 1A
动作LED电流(平均) 0.7mA
LED压降(最大) 1.5V
复位LED电流(最小) 0.4mA
最大允许LED电流 50mA
LED反向电压 5V
动作LED电流(最大) 3mA
复位LED电流(平均) 0.65mA
保存温度 -40℃~+100℃
使用环境温度 -40℃~+85℃
特点 兼备高速动作,低漏电流以及低导通电阻的小型PhotoMOS
订货产品号 AQW227NS

特点
100% Tested Low Voltage Noise: 6nV/rtHz Max
S8 Package Standard Pinout
Voltage Gain: 1.2 Million Min
Offset Voltage: 1.5mV Max
Offset Voltage Drift: 15μV/°C Max
Input Bias Current, Warmed Up 450pA Max
Gain-Bandwidth Product: 5.6MHz Typ
Guaranteed Specifications with ±5V Supplies
Guaranteed Matching Specifications

典型应用

典型应用

描述
Most H (Metal Can), J (Ceramic), and K (Metal Can) Packages from Linear Technology Are Now Obsolete
The LT?1113 achieves a new standard of excellence in noise performance for a dual JFET op amp. The 4.5nV/Rt.Hz 1kHz noise combined with low current noise and picoampere bias currents makes the LT1113 an ideal choice for amplifying low level signals from high impedance capacitive transducers.
The LT1113 is unconditionally stable for gains of 1 or more, even with load capacitances up to 1000pF. Other key features are 0.4mV VOS and a voltage gain of 4 million. Each individual amplifier is 100% tested for voltage noise, slew rate and gain bandwidth.
The design of the LT1113 has been optimized to achieve true precision performance with an industry standard pinout in the S0-8 package. A set of specifications are provided for ±5V supplies and a full set of matching specifications are provided to facilitate the use of the LT1113 in matching dependent applications such as instrumentation amplifier front ends.
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