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ECASD40D227M009K00

厂商:
Murata
类别:
高分子电容器
包装:
-
封装:
-
无铅情况/ROHS:
无铅
描述:
高分子电容器

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参数 数值
焊接方法 Reflow
新品名 ECASD40D227M009K00
电极 e
宽 W 4.3mm ±0.2mm
厚度T 1.9mm ±0.1mm
特点
长 L 7.3mm ±0.3mm
静电容量 220μF ±20%
ESR 9m ohm
电极间隙 g (最小)
额定电压 2Vdc
容许纹波电流 3.0Arms
温度范围 -40 to +105℃
尺寸代码 (单位为mm) 7343
推荐部件

特点
8V to 48V Power Supply Range
Protected from -15V to 60V Supply Transients
Fully Enhances N-Channel MOSFET Switches
Individual Short-Circuit Protection
Individual Automatic Restart Timers
Programmable Current Limit, Delay Time, and Auto-Restart Period
Voltage-Limited Gate Drive
Defaults to OFF State with Open Input
Flowthrough Input to Output Pinout
Available in 20-Lead DIP or SOL Package

典型应用

典型应用

描述
Please download the following Change Notice concerning SOIC, PDIP and CERDIP Wide Body Packages. sntopm.pdf
The LT1161 is a quad high-side gate driver allowing the use of low cost N-channel power MOSFETs for high-side switching applications. It has four independent switch channels, each containing a completely self-contained charge pump to fully enhance an N-channel MOSFET switch with no external components.
Also included in each switch channel is a drain sense comparator that is used to sense switch current. When preset current level is exceeded, the switch is turned off. The switch remains off for a period of time set by an external timing capacitor and then automatically attempts to restart. If the fault is still present, this cycle repeats until the fault is removed, thus protecting the MOSFET.
The LT1161 has been specifically designed for harsh operating environments such as industrial, avionics, and automotive applications where poor supply regulation and/or transients may be present. The device will not sustain damage from supply voltages of -15V to 60V.
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