特点
Allows Lowest Drop 3.3V Supply Switching
Operates on 3.3V or 5V Nominal Supplies
3 Microamps Standby Current
80 Microamps ON Current
Drives Low Cost N-Channel Power MOSFETs
No External Charge Pump Components
Controlled Switching ON and OFF Times
Compatible with 3.3V and 5V Logic Families
Available in 8-Pin SOIC
典型应用

典型应用

描述
描述 The LTC1157 dual 3.3V micropower MOSFET gate driver makes it possible to switch either supply or ground reference loads through a low R DS(ON) Nchannel switch (N-channel switches are required at 3.3V because P-channel MOSFETS do not have guaranteed R DS(ON) with VGS = 3.3V). The LTC1157 internal charge pump boosts the gate drive voltage 5.4V above the positive rail (8.7V above ground), fully enhancing a logic level N-channel switch for 3.3V high-side applications and a standard N-channel switch for 3.3V low-side applications. The gate drive voltage at 5V is typically 8.8V above supply (13.8V above ground), so standard N-channel MOSFET switches can be used for both high-side and low-side applications. Micropower operation, with 3μA standby current and 80μA operating current, makes the LTC1157 well suited for battery-powered applications. The LTC1157 is available in both 8-pin DIP and SOIC.