详细描述
RFMD’s SPB2026Z is a high linearity single-stage class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a surface-mountable plastic encapsulated package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is well suited for use as a driver stage in macro/micro-cell infrastructure equipment or as the final output stage in pico-cell infrastructure equipment. It can run from a 3V to 6V supply. It is prematched to ~5Ω on the input for broadband performance and ease of matching at the board level. It features an input power detector, on/off power control, ESD protection, excellent overall robustness and a hand reworkable and thermally enhanced SOF-26 package. This product is RoHS and WEEE compliant.
特点
P1dB = 33.8dBm at 5V, 1960MHz ?
ACP = -45dBc with 25dBm Channel Power at 1960MHz
On-Chip Input Power Detector
Low Thermal Resistance Package
Power Up/Down Control < 1μs
Robust Class 1C ESD