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MRF8S9100HSR3

厂商:
Freescale
类别:
RF功率晶体管
包装:
-
封装:
NI-780S
无铅情况/ROHS:
无铅
描述:
HV8 900MHZ 100W NI780HS

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  • 参数
  • 描述
  • 文档
参数 数值
Halogen Free Yes
Package Length (nominal) (mm) 20.570
Pin/Lead/Ball Count 3
Die Technology LDMOS
P1dB (Typ) (W) 108
Device Production Availability 25 Mar 2011
Minimum Package Quantity (MPQ) 250
MPQ Container REEL
Sample Exception Availability Y
Part Number MRF8S9100HSR3
Frequency Band (Min-Max) (MHz) 920 to 960
Material Type Tested Packaged Device
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 72 @ CW
POQ Container REEL
Tape & Reel Yes
Budgetary Price($US) -
Device Sample Availability 25 Mar 2011
Frequency (Max) (MHz) 960
Power Gain (Typ) (dB) @ f (MHz) 19.3 @ 920
Supply Voltage (Typ) (V) 28
Application/Qualification Tier COMMERCIAL, INDUSTRIAL
Matching Input
Efficiency (Typ) (%) 51.6
Material Composition Declaration (MCD) Download MCD Report Download MCD Report
Preferred Order Quantity (POQ) 250
Thermal Resistance (Spec) (°CW) 0.65
Status Active
Harmonized Tariff (US) Disclaimer 8541.29.0075
Package Description and Mechanical Drawing NI-780S
Export Control Classification Number (US) 5A991
Life Cycle Description (code) PRODUCT STABLE GROWTH/MATURITY
RoHS Certificate of Analysis (CoA) Contact Us
Device Weight (g) 4.74270
Micron Size (μm) .35
Class AB
Test Signal 1-Tone
Leadtime (weeks) 8
2nd Level Interconnect e4
REACH SVHC Freescale REACH Statement
Description HV8 900MHZ 100W NI780HS
Package Thickness (nominal) (mm) 3.760
Package Width (nominal) (mm) 9.780

The MRF8S9100HR3 and MRF8S9100HSR3 are designed for GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. View Product Image

Features

  • Typical GSM Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 72 Watts CW
  • Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 133 Watts CW Output Power (3 dB Input Overdrive from Rated Pout)
  • Typical Pout @ 1 dB Compression Point 108 Watts CW
  • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 700 mA, Pout = 45 Watts Avg.
  • Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters
  • Internally Matched for Ease of Use
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.




Packaging Information
文档名称 文档类型 软件 描述
MRF8S9100HSR3PDF下载 点击下载 点击下载 98ASB15607C
MRF8S9100HSR3PDF下载 点击下载 点击下载 98ASB16718C
Data Sheets
文档名称 文档类型 软件 描述
MRF8S9100HSR3PDF下载 点击下载 点击下载 MRF8S9100H
Application Notes
文档名称 文档类型 软件 描述
MRF8S9100HSR3PDF下载 点击下载 点击下载 AN1955
Engineering Bulletins
文档名称 文档类型 软件 描述
MRF8S9100HSR3PDF下载 点击下载 点击下载 EB212
Selector Guides
文档名称 文档类型 软件 描述
MRF8S9100HSR3PDF下载 点击下载 点击下载 SG46